BCP69_15 Datasheet, PDF (14/24 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

NXP Semiconductors
BCP69; BC869; BC69PA
20 V, 2 A PNP medium power transistors
300
h_FE
(1)
200
(2)
100
(3)
006aac697
0
-10^-4
-10^-3
-10^-2
-10^-1
-1
-10
I_C (A)
V_CE = 1 V
(1) T_amb = 100 C
(2) T_amb = 25 C
(3) T_amb = 55 C
Fig 15. h_FE selection -16: DC current gain as a
function of collector current; typical values
-1.2
V_BE
(V)
(1)
-0.8
(2)
(3)
-0.4
006aac698
−2.4
I_C
(A)
−2.0
−1.6
−1.2
−0.8
−0.4
006aab403
I_B (mA) = −18.0
−14.4
−16.2
−12.6
−10.8
−9.0
−7.2
−5.4
−3.6
−1.8
0
0
−1
−2
−3
−4
−5
V_CE (V)
T_amb = 25 C
Fig 16. h_FE selection -16: collector current as a
function of collector-emitter voltage; typical
values
-1
V_CEsat
(V)
-10^-1
006aac699
(1)
(2)
-10^-2
(3)
0.0
-10^-1
-1
-10
-10²
-10³
-10⁴
I_C (mA)
V_CE = 1 V
(1) T_amb = 55 C
(2) T_amb = 25 C
(3) T_amb = 100 C
Fig 17. h_FE selection -16: base-emitter voltage as a
function of collector current; typical values
-10^-3
-10^-1
-1
-10
-10²
-10³
-10⁴
I_C (mA)
I_C/I_B = 10
(1) T_amb = 100 C
(2) T_amb = 25 C
(3) T_amb = 55 C
Fig 18. h_FE selection -16: collector-emitter saturation
voltage as a function of collector current;
typical values
BCP69_BC869_BC69PA
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 7 — 12 October 2011
© NXP B.V. 2011. All rights reserved.
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