TDA8931 Datasheet, PDF (13/31 Pages) NXP Semiconductors – Power comparator 1 X 20 W

Philips Semiconductors
13. Dynamic characteristics
Table 10: Characteristics
V_P = 22 V; T_amb = 25 °C; R_L = 4 Ω; unless otherwise specified.
Symbol Parameter
Conditions
Amplifier; SE channel
P_o(max)
maximum output power
THD
V_n(o)
total harmonic distortion
noise output voltage
R_L = 4 Ω; THD = 10 %
V_P = 26 V
V_P = 22 V
R_L = 8 Ω; THD =10 %
V_P = 30 V
P_o = 1 W, f_i = 1 kHz
Operating mode; inputs
shorted; gain = 20 dB,
AES17 brick wall filter
G_v(range)
η
gain adjust range
efficiency
PWM output: pin OUT (see Figure 4)
P_o = 15 W
V_p = 22 V; R_L = 4 Ω
V_p = 30 V; R_L = 8 Ω
t_r
t_f
t_dead
t_r(LH)
t_r(HL)
t_W(min)
R_DSon
output voltage rise time
output voltage fall time
dead time
response time of transition from
LOW-to-HIGH
response time of transition from
HIGH-to-LOW
minimum pulse width
drain-source on-state resistance of
output transistor
V_i(dif) = 70 mV
V_i(dif) = 3.3 V
V_i(dif) = 70 mV
V_i(dif) = 3.3 V
[1] Measured in the application board.
TDA8931
Power comparator 1 × 20 W
Min Typ Max Unit
[1]
21
22
-
W
15
16
-
W
15
[1] _-
[1] _-
16
-
W
0.02 0.1 %
128 150 µV
[1] ₁₄
[1] ₈₇
[1] ₈₉
-
-
-
-
-
-
-
-
-
20
26
dB
89
-
%
91
-
%
20
-
ns
20
-
ns
0
-
ns
120 -
ns
100 -
ns
120 -
ns
100 -
ns
150 -
ns
0.22 0.3 Ω
9397 750 13847
Preliminary data sheet
Rev. 01 — 14 January 2004
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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