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TDA8931 Datasheet, PDF (11/31 Pages) NXP Semiconductors – Power comparator 1 X 20 W
Philips Semiconductors
TDA8931
Power comparator 1 × 20 W
10. Limiting values
Table 7: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VP
operating supply voltage
asymmetrical
12
symmetrical
±6
40
V
±20
V
VENABLE
VOVP
Vn
IORM
Pd(max)
Tj
Tstg
Tamb
maximum voltage on pin ENABLE
maximum voltage on pin OVP
voltage on all other pins
repetitive peak output current
maximum power dissipation
junction temperature
storage temperature
ambient temperature
-
14
V
-
14
V
VSS − 0.3 VDD + 0.3 V
-
8
A
-
2.5
W
-
150
°C
−55
+150
°C
−40
+85
°C
11. Thermal characteristics
Table 8:
Symbol
Rth(j-a)
Rth(j-p)
Rth(j-c)
Thermal characteristics
Parameter
Conditions
thermal resistance junction to ambient in free air
thermal resistance junction to pin
in free air
thermal resistance junction to case in free air
Typ
[1] 24
[2] 16
[3] 3
Unit
K/W
K/W
K/W
[1] Measured in the application board.
[2] Vp = 22 V; RL = 4 Ω; Vripple = 2 V (p-p); fripple = 100 Hz with feed-forward network (470 kΩ and
15 nF).
[3] Strongly depending on where you measure on the case.
12. Static characteristics
Table 9: Characteristics
VP = 22 V; Tamb = 25 °C; fcarrier = 290 kHz; unless otherwise specified.
Symbol Parameter
Conditions
Supply voltage
VP
operating supply voltage
VP = VDDP − VSSP
asymmetrical
symmetrical
Iq
quiescent current
with load; filter and snubbers
connected
Istb
standby current
Standby mode; SE capacitor
charged
Isleep
sleep current
Sleep mode
Min
Typ
Max Unit
12
22
35
V
±6
±11
±17.5 V
-
20
30
mA
-
10
15
mA
-
100
200
µA
9397 750 13847
Preliminary data sheet
Rev. 01 — 14 January 2004
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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