PBSS4160DPN_15 Datasheet, PDF (13/18 Pages) NXP Semiconductors – 60 V, 1 A NPN/PNP low VCEsat (BISS) transistor

NXP Semiconductors
PBSS4160DPN
60 V, 1 A NPN/PNP low V_CEsat (BISS) transistor
−I_B
90 %
10 %
−I_C
90 %
−I_Bon (100 %)
input pulse
(idealized waveform)
− I _Boff
output pulse
(idealized waveform)
−I_C (100 %)
10 %
t_d
t_r
t _on
t_s
t _off
Fig 23. TR2 (PNP): BISS transistor switching time definition
t
t_f
006aaa266
V_BB
V_CC
(probe)
oscilloscope
450 Ω
V_I
R_B
R2
R1
R_C
V_{o (probe)}
oscilloscope
450 Ω
DUT
mgd624
I_C = −0.5 A; I_Bon = −25 mA; I_Boff = 25 mA; R1 = open; R2 = 100 Ω; R_B = 300 Ω; R_C = 20 Ω
Fig 24. TR2 (PNP): Test circuit for switching times
PBSS4160DPN_3
Product data sheet
Rev. 03 — 11 December 2009
© NXP B.V. 2009. All rights reserved.
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