PBSS4160DPN_15 Datasheet, PDF (1/18 Pages) NXP Semiconductors – 60 V, 1 A NPN/PNP low VCEsat (BISS) transistor

PBSS4160DPN
60 V, 1 A NPN/PNP low V_CEsat (BISS) transistor
Rev. 03 — 11 December 2009
Product data sheet
1. Product profile
1.1 General description
NPN/PNP low V_CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457
(SC-74) Surface Mounted Device (SMD) plastic package.
1.2 Features
„ Low collector-emitter saturation voltage V_CEsat
„ High collector current capability: I_C and I_CM
„ High collector current gain (h_FE) at high I_C
„ High efficiency due to less heat generation
„ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
„ Complementary MOSFET driver
„ Half and full bridge motor drivers
„ Dual low power switches (e.g. motors, fans)
„ Automotive applications
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
TR1 (NPN)
V_CEO
I_C
I_CM
R_CEsat
collector-emitter voltage open base
-
collector current (DC)
[1] _-
peak collector current
single pulse; t_p ≤ 1 ms
-
collector-emitter saturation I_C = 1 A; I_B = 100 mA ^[2] -
resistance
-
60 V
-
1
A
-
2
A
200 250 mΩ
TR2 (PNP)
V_CEO
I_C
I_CM
R_CEsat
collector-emitter voltage open base
-
collector current (DC)
[1] _-
peak collector current
single pulse; t_p ≤ 1 ms
-
collector-emitter saturation I_C = −1 A; I_B = −100 mA ^[2] -
resistance
-
−60 V
-
−900 mA
-
−2 A
250 330 mΩ
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm².
[2] Pulse test: t_p ≤ 300 μs; δ ≤ 0.02.