PBSS4130PANP_15 Datasheet, PDF (13/21 Pages) NXP Semiconductors – 30 V, 1 A NPN/PNP low VCEsat (BISS) transistor

NXP Semiconductors
PBSS4130PANP
30 V, 1 A NPN/PNP low VCEsat (BISS) transistor
10³
R_CEsat
(Ω)
10²
006aad178
10
1
(1)
(2)
10^-1
10^-1
1
(3)
10
10²
I_C/I_B = 20
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −55 °C
10³
10⁴
I_C (mA)
Fig. 16. TR1 (NPN): Collector-emitter saturation
resistance as a function of collector current;
typical values
600
006aad180
h_FE
(1)
400
(2)
200
(3)
10³
R_CEsat
(Ω)
(1)
10²
(2)
10
(3)
1
006aad179
10^-1
10^-2
10^-1
1
10
10²
10³
10⁴
I_C (mA)
T_amb = 25 °C
(1) I_C/I_B = 100
(2) I_C/I_B = 50
(3) I_C/I_B = 10
Fig. 17. TR1 (NPN): Collector-emitter saturation
resistance as a function of collector current;
typical values
-2.0
I_C
I_B = -20 mA -18 -16 -14
(A)
-1.6
-1.2
006aad181
-12
-10
-8
-6
-0.8
-4
-0.4
-2
0
-10^-1
-1
-10
-10²
-10³
-10⁴
I_C (mA)
V_CE = −2 V
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −55 °C
Fig. 18. TR2 (PNP): DC current gain as a function of
collector current; typical values
0
0
-1
-2
-3
-4
-5
V_CE (V)
T_amb = 25 °C
Fig. 19. TR2 (PNP): Collector current as a function of
collector-emitter voltage; typical values
PBSS4130PANP
Product data sheet
All information provided in this document is subject to legal disclaimers.
12 December 2012
© NXP B.V. 2012. All rights reserved
13 / 21