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BCP54_15 Datasheet, PDF (13/22 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors
NXP Semiconductors
BCP54; BCX54; BC54PA
45 V, 1 A NPN medium power transistors
300
hFE
200
100
006aac691
(1)
(2)
(3)
1.6
IC
(A)
1.2
0.8
0.4
006aaa084
IB (mA) = 50 45 40 35 30
25
20
15
10
5
0
10–4
10–3
10–2
10–1
1
10
IC (A)
VCE = 2 V
(1) Tamb = 100 C
(2) Tamb = 25 C
(3) Tamb = 55 C
Fig 15. DC current gain as a function of collector
current; typical values
1.2
VBE
(V)
(1)
0.8
(2)
(3)
0.4
006aac692
0
0
0.4
0.8
1.2
1.6
2.0
VCE (V)
Tamb = 25 C
Fig 16. Collector current as a function of
collector-emitter voltage; typical values
006aac693
1
VCEsat
(V)
10–1
(1)
(2)
0.0
10–1
1
10
102
103
104
IC (mA)
10–2
10–1
1
(3)
10
102
103
104
IC (mA)
VCE = 2 V
(1) Tamb = 55 C
(2) Tamb = 25 C
(3) Tamb = 100 C
Fig 17. Base-emitter voltage as a function of collector
current; typical values
IC/IB = 10
(1) Tamb = 100 C
(2) Tamb = 25 C
(3) Tamb = 55 C
Fig 18. Collector-emitter saturation voltage as a
function of collector current; typical values
BCP54_BCX54_BC54PA
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 8 — 21 October 2011
© NXP B.V. 2011. All rights reserved.
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