BCP54_15 Datasheet, PDF (12/22 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

NXP Semiconductors
BCP54; BCX54; BC54PA
45 V, 1 A NPN medium power transistors
10³
Z_th(j-a)
(K/W)
10²
10
duty cycle = 1
0.75
0.5
0.33
0.25
0.2
0.1
0.05
0.02
1
0
0.01
006aac687
10^–1
10^–5
10^–4
10^–3
10^–2
10^–1
1
10
10²
10³
t_p (s)
FR4 PCB, 4-layer copper, mounting pad for collector 1 cm²
Fig 14. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061;
typical values
7. Characteristics
Table 8. Characteristics
T_amb = 25 C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
I_CBO
collector-base cut-off V_CB = 30 V; I_E = 0 A
current
V_CB = 30 V; I_E = 0 A;
T_j = 150 C
I_EBO
emitter-base cut-off V_EB = 5 V; I_C = 0 A
current
-
-
100 nA
-
-
10 A
-
-
100 nA
h_FE
V_CEsat
DC current gain
DC current gain
h_FE selection -10
h_FE selection -16
collector-emitter
saturation voltage
V_CE = 2 V
I_C = 5 mA
[1] ₆₃
-
I_C = 150 mA
[1] ₆₃
-
I_C = 500 mA
[1] ₄₀
-
V_CE = 2 V
I_C = 150 mA
[1] ₆₃
-
I_C = 150 mA
[1] _{100 -}
I_C = 500 mA; I_B = 50 mA ^[1] -
-
-
250
-
160
250
0.5 V
V_BE
base-emitter voltage V_CE = 2 V; I_C = 500 mA ^[1] -
-
1
V
C_c
collector capacitance V_CB = 10 V; I_E = i_e = 0 A;
-
6
-
pF
f = 1 MHz
f_T
transition frequency V_CE = 5 V; I_C = 50 mA;
100 180 -
MHz
f = 100 MHz
[1] Pulse test: t_p  300 s;  = 0.02.
BCP54_BCX54_BC54PA
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 8 — 21 October 2011
© NXP B.V. 2011. All rights reserved.
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