BCP53_15 Datasheet, PDF (13/22 Pages) SeCoS Halbleitertechnologie GmbH – PNP Silicon Medium Power Transistor

NXP Semiconductors
BCP53; BCX53; BC53PA
80 V, 1 A PNP medium power transistors
300
h_FE
(1)
200
(2)
100
(3)
006aac688
−1.6
I_C
(A)
−1.2
−0.8
−0.4
006aaa230
I_B (mA) = −45 −40.5 −36
−31.5
−27
−22.5
−18
−13.5
−9
−4.5
0
–10^–4
–10^–3
–10^–2
–10^–1
–1
–10
I_C (A)
V_CE = 2 V
(1) T_amb = 100 C
(2) T_amb = 25 C
(3) T_amb = 55 C
Fig 15. DC current gain as a function of collector
current; typical values
–1.2
V_BE
(V)
(1)
–0.8
(2)
006aac689
0
0
−0.4
−0.8
−1.2
−1.6
−2.0
V_CE (V)
T_amb = 25 C
Fig 16. Collector current as a function of
collector-emitter voltage; typical values
–10
V_CEsat
(V)
006aac690
–1
–0.4
(3)
–10^–1
(1)
(2)
0.0
–10^–1
–1
–10
–10²
–10³
–10⁴
I_C (mA)
–10^–2
–10^–1
–1
(3)
–10
–10²
–10³
–10⁴
I_C (mA)
V_CE = 2 V
(1) T_amb = 55 C
(2) T_amb = 25 C
(3) T_amb = 100 C
Fig 17. Base-emitter voltage as a function of collector
current; typical values
I_C/I_B = 10
(1) T_amb = 100 C
(2) T_amb = 25 C
(3) T_amb = 55 C
Fig 18. Collector-emitter saturation voltage as a
function of collector current; typical values
BCP53_BCX53_BC53PA
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 9 — 19 October 2011
© NXP B.V. 2011. All rights reserved.
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