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BCP53_15 Datasheet, PDF (12/22 Pages) SeCoS Halbleitertechnologie GmbH – PNP Silicon Medium Power Transistor | |||
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NXP Semiconductors
BCP53; BCX53; BC53PA
80 V, 1 A PNP medium power transistors
103
Zth(j-a)
(K/W)
102
10
duty cycle = 1
0.75
0.5
0.33
0.25
0.2
0.1
0.05
0.02
1
0
0.01
006aac687
10â1
10â5
10â4
10â3
10â2
10â1
1
10
102
103
tp (s)
FR4 PCB, 4-layer copper, mounting pad for collector 1 cm2
Fig 14. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061;
typical values
7. Characteristics
Table 8. Characteristics
Tamb = 25 ï°C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
ICBO
collector-base cut-off VCB = ï30 V; IE = 0 A
current
VCB = ï30 V; IE = 0 A;
Tj = 150 ï°C
IEBO
emitter-base cut-off VEB = ï5 V; IC = 0 A
current
-
-
ï100 nA
-
-
ï10 ïA
-
-
ï100 nA
hFE
DC current gain
VCE = ï2 V
IC = ï5 mA
IC = ï150 mA
IC = ï500 mA
DC current gain
VCE = ï2 V
hFE selection -10
IC = ï150 mA
63 -
-
63 -
250
[1] 40
-
-
63 -
160
VCEsat
VBE
Cc
hFE selection -16
IC = ï150 mA
100 -
collector-emitter
saturation voltage
IC = ï500 mA;
IB = ï50 mA
[1] -
-
base-emitter voltage VCE = ï2 V; IC = ï500 mA [1] -
-
collector capacitance VCB = ï10 V; IE = ie = 0 A;
-
15
f = 1 MHz
250
ï0.5 V
ï1 V
-
pF
fT
transition frequency VCE = ï5 V; IC = ï50 mA;
-
145 -
MHz
f = 100 MHz
[1] Pulse test: tp ï£ 300 ïs; ï¤ = 0.02.
BCP53_BCX53_BC53PA
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 9 â 19 October 2011
© NXP B.V. 2011. All rights reserved.
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