TEA6821T Datasheet, PDF (12/47 Pages) NXP Semiconductors – ICE car radio

Philips Semiconductors
ICE car radio
Preliminary specification
TEA6821T
CHARACTERISTICS
V_56-4 = V_28-4 = 8.5 V, V_5-4 = V_52-55 = 5 V, T_amb = +25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Current consumption
I_s1
I₅₆
I₂₈
I₁₉ + I₂₀
I_s1
I₅₆
I₂₂ + I₂₃
I_s2
supply current 1
FM
supply current 1at pin 56
supply current 1 at pin 28
supply current 1 at pins 19 and 20
supply current 1
AM
supply current 1at pin 56
supply current 1 at pins 22 and 23
supply current 2 at pin 5
FM
AM
I_s3
supply current 3 at pin 52
FM IF path
24
30
36
mA
16
20
24
mA
2.4 3.0 3.6 mA
4.8 6.0 7.2 mA
18
24
30
mA
9.5 12
15
mA
8
10
12.5 mA
18
21
25
mA
14
17
21
mA
8
10
12
mA
FM mixer
R_13-14
C_13-4, C_14-4
R_opt
R_19-20
C_19-4, C_20-4
I_19IF2/V_13-14IF1
I₁₉, I₂₀
V_19-20
IP3
input resistance
input capacitance
optimum generator resistance
output resistance
output capacitance
conversion gain
mixer bias current
mixer leakage current
maximum output voltage
(peak-to-peak value)
third order intermodulation
Oscillator
f_osc
∆f_osc/∆T
R₁
C₀
oscillator frequency
oscillator spread
temperature dependence of
oscillator frequency
crystal motional resistance
crystal shunt capacitance
FM IF2 amplifier
V_29-4/V_27-24 amplifier gain
V_27-24
maximum input voltage for 1 dB
compression point (RMS value)
in AM position
crystal type PHILIPS
9922 521 00098
loaded with 330 Ω;
see Fig.9
5
7
−
−
3
4.5
−
1.2 −
15
20
−
−
5
7
1.65 1.9 2.2
2.4 3.0 3.6
−
−
2
12.0 14.0 −
114 124 −
kΩ
pF
kΩ
kΩ
pF
mS
mA
µA
V
dBµV
−
61.5 −
MHz
−
−
250 Hz
−
30
−
ppm/K
−
−
70
Ω
−
−
5
pF
8
10
12
dB
80
110 −
mV
September 1993
12