TDA5147K Datasheet, PDF (12/32 Pages) NXP Semiconductors – 12 V Voice Coil Motor VCM driver and spindle motor drive combination chip

Philips Semiconductors
12 V Voice Coil Motor (VCM) driver and
spindle motor drive combination chip
Product specification
TDA5147K
During a power-down situation the power-on reset circuit
must not only generate a POR output signal, but must also
activate the VCM retract circuitry. In doing so, the VCM
driver draws power from the BEMF of the SDRVU output
during spin-down, and uses this power to bias the VCM
against one of the hard stops of the actuator. This prevents
the heads from landing on data zones. This BEMF supply
is isolated from the supply voltage for the drive, and is
half-wave rectified. An external retract capacitor is used to
provide the supply voltage for the retract circuit.
It should be noted that in both power-down retract and
command retract situations, the voltage across the VCM is
nominally limited to 1.2 V (to limit the velocity of the
actuator). Additional information is given in Fig.6.
SLEEP MODE
A sleep mode is used to save power when the spindle
drivers and the VCM drivers are in a disabled state. These
two conditions automatically turn off all drivers and
amplifiers that are not required. The total power dissipation
is approximately 100 mW. The sleep mode is activated
when both the spindle is disabled (SCNTL1, 2 and 3 = 0)
and the VCM is disabled (V_PCNTL left open-circuit).
THERMAL SHUTDOWN
When the TDA5147K chip temperature is greater than
150 °C all power drivers will be automatically disabled.
This is to ensure that no fire hazard occurs due to chip
overheating.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V_CCA1
PARAMETER
analog supply voltage 1
V_CCA2
analog supply voltage 2
V_o
V_n
T_stg
T_j
T_amb
output voltage (pins 2, 12 and 24)
output voltage on other pins
IC storage temperature
maximum junction temperature
operating ambient temperature
CONDITIONS
indefinite time period
note 1
indefinite time period
note 1
MIN.
−0.3
−0.3
−0.3
−0.3
−0.3
−0.3
−55
−
0
MAX.
6.0
7.0
13.5
15.0
20
−
+125
150
70
UNIT
V
V
V
V
V
V
°C
°C
°C
Note
1. Stress beyond these levels may cause permanent damage to the device. This is a stress rating only and functional
operation of the device under this condition is not implied.
HANDLING
Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be totally safe, it is
desirable to take normal precautions appropriate to handling MOS devices.
THERMAL CHARACTERISTICS
See report AA94052 (dated 94-02-03): “PLCC52 - Thermal resistance evaluation”.
SYMBOL
T_{th j-a}
PARAMETER
thermal resistance from junction to ambient in free air
VALUE
30
UNIT
K/W
1996 Jul 26
12