PMWD15UN Datasheet, PDF (12/12 Pages) NXP Semiconductors – Dual N-channel mTrenchMOS ultra low level FET

Philips Semiconductors
PMWD15UN
Dual N-channel µTrenchMOS™ ultra low level FET
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
3
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
4
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
6
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
7
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
9
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11
10
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
11
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
13
Contact information . . . . . . . . . . . . . . . . . . . . 11
© Koninklijke Philips Electronics N.V. 2005
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 5 April 2005
Document number: 9397 750 14713
Published in The Netherlands