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74HC_HCT245_15 Datasheet, PDF (12/22 Pages) NXP Semiconductors – Octal bus tranceiver; 3-state
Philips Semiconductors
74HC245; 74HCT245
Octal bus tranceiver; 3-state
Table 10: Dynamic characteristics type 74HCT245
GND = 0 V; test circuit see Figure 7.
Symbol Parameter
Conditions
Tamb = 25 °C
tPHL, tPLH propagation delay An to Bn or Bn
to An
tPZH, tPZL 3-state output enable time OE to
An or OE to Bn
see Figure 5
VCC = 4.5 V
VCC = 5.0 V; CL = 15 pF
VCC = 4.5 V; see Figure 6
tPHZ, tPLZ 3-state output disable time OE to VCC = 4.5 V; see Figure 6
An or OE to Bn
tTHL, tTLH
CPD
output transition time
power dissipation capacitance
per transceiver
VCC = 4.5 V; see Figure 5
VI = GND to VCC − 1.5 V
Tamb = −40 °C to +85 °C
tPHL, tPLH propagation delay An to Bn or Bn VCC = 4.5 V; see Figure 5
to An
tPZH, tPZL 3-state output enable time OE to VCC = 4.5 V; see Figure 6
An or OE to Bn
tPHZ, tPLZ 3-state output disable time OE to VCC = 4.5 V; see Figure 6
An or OE to Bn
tTHL, tTLH output transition time
Tamb = −40 °C to +125 °C
tPHL, tPLH propagation delay An to Bn or Bn
to An
VCC = 4.5 V; see Figure 5
VCC = 4.5 V; see Figure 5
tPZH, tPZL 3-state output enable time OE to VCC = 4.5 V; see Figure 6
An or OE to Bn
tPHZ, tPLZ 3-state output disable time OE to VCC = 4.5 V; see Figure 6
An or OE to Bn
tTHL, tTLH output transition time
VCC = 4.5 V; see Figure 5
[1] CPD is used to determine the dynamic power dissipation (PD in µW):
PD = CPD × VCC2 × fi × N + ∑ (CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
∑ (CL × VCC2 × fo) = sum of outputs.
Min
Typ
Max Unit
-
12
22
ns
-
10
-
ns
-
16
30
ns
-
16
30
ns
-
5
12
ns
[1] -
30
-
pF
-
-
28
ns
-
-
38
ns
-
-
38
ns
-
-
15
ns
-
-
33
ns
-
-
45
ns
-
-
45
ns
-
-
18
ns
9397 750 14502
Product data sheet
Rev. 03 — 31 January 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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