PMFPB8032XP Datasheet, PDF (11/16 Pages) NXP Semiconductors – 20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky

NXP Semiconductors
PMFPB8032XP
20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky combination
-4
I_S
(A)
-3
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-2
-1
T_j = 150 °C
T_j = 25 °C
10
I_F
(1)
(A)
(2)
1
10^{- 1}
10^{- 2}
(3) (4) (5)
10^{- 3}
017aaa084
0
0
-0.4
-0.8
-1.2
-1.4
V_SD (V)
V_GS = 0 V
Fig. 18. MOSFET transistor: Source current as a
function of source-drain voltage; typical values
10^{- 4}
0.0
0.2
0.4
0.6
0.8
1.0
V_F (V)
(1) T_j = 150 °C
(2) T_j = 125 °C
(3) T_j = 85 °C
(4) T_j = 25 °C
(5) T_j = −40 °C
Fig. 19. Schottky diode: Forward current as a function
of forward voltage; typical values
1
I_R
(A)
10^{- 1}
10^{- 2}
017aaa085
(1)
(2)
250
C_d
(pF)
200
017aaa086
10^{- 3}
150
(3)
10^{- 4}
100
10^{- 5}
50
10^{- 6}
(4)
10^{- 7}
0
5
10
(1) T_j = 125 °C
(2) T_j = 85 °C
(3) T_j = 25 °C
(4) T_j = −40 °C
15
20
V_R (V)
Fig. 20. Schottky diode: Reverse current as a function
of reverse voltage; typical values
0
0
5
10
15
20
V_R (V)
f = 1 MHz; T_amb = 25 °C
Fig. 21. Schottky diode: Diode capacitance as a
function of reverse voltage; typical values
PMFPB8032XP
Product data sheet
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21 December 2012
© NXP B.V. 2012. All rights reserved
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