PMFPB8032XP Datasheet, PDF (1/16 Pages) NXP Semiconductors – 20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky

PMFPB8032XP
20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky
combination
21 December 2012
Product data sheet
1. General description
Small-signal P-channel enhancement mode Field-Effect Transistor (FET) using Trench
MOSFET technology and ultra low V_F Maximum Efficiency General Application (MEGA)
Schottky diode combined in a small and leadless ultra thin DFN2020-6 (SOT1118)
Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
• 1.8 V R_DSon rated for low-voltage gate drive
• Small and leadless ultra thin SMD plastic package: 2 × 2 × 0.65 mm
• Exposed drain pad for excellent thermal conduction
• Integrated ultra low V_F MEGA Schottky diode
3. Applications
• Charging switch for portable devices
• DC-to-DC converters
• Power management in battery-driven portables
• Hard disk and computing power management
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
MOSFET transistor
V_DS
drain-source voltage T_j = 25 °C
-
-
-20 V
V_GS
gate-source voltage
-12 -
12
V
I_D
drain current
V_GS = -4.5 V; T_amb = 25 °C; t ≤ 5 s
[1]
-
-
-3.7 A
Schottky diode
I_F
forward current
T_sp ≤ 105 °C
-
-
2
A
V_R
reverse voltage
T_amb = 25 °C
-
-
20
V
MOSFET transistor static characteristics
R_DSon
drain-source on-state V_GS = -4.5 V; I_D = -2.7 A; T_j = 25 °C
resistance
-
80
102 mΩ
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