PBSS4330PAS_15 Datasheet, PDF (11/18 Pages) NXP Semiconductors – 30 V, 3 A NPN low VCEsat (BISS) transistor

NXP Semiconductors
PBSS4330PAS
30 V, 3 A NPN low VCEsat (BISS) transistor
10²
R_CEsat
(Ω)
10
006aac050
1
(1)
(2)
10^{- 1}
(3)
10^{- 2}
10^{- 1}
1
10
I_C/I_B = 20
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −55 °C
10²
10³
10⁴
I_C (mA)
Fig. 14. Collector-emitter saturation resistance as a
function of collector current; typical values
10³
R_CEsat
(Ω)
10²
006aac051
10
(1)
1
(2)
10^{- 1}
(3)
10^{- 2}
10^{- 1}
1
10
T_amb = 25 °C
(1) I_C/I_B = 100
(2) I_C/I_B = 50
(3) I_C/I_B = 10
10²
10³
10⁴
I_C (mA)
Fig. 15. Collector-emitter saturation resistance as a
function of collector current; typical values
PBSS4330PAS
Product data sheet
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11 September 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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