PBSS4330PAS_15 Datasheet, PDF (1/18 Pages) NXP Semiconductors – 30 V, 3 A NPN low VCEsat (BISS) transistor

PBSS4330PAS
30 V, 3 A NPN low VCEsat (BISS) transistor
11 September 2014
Product data sheet
1. General description
NPN low V_CEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra
thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic
package with medium power capability and visible and soldarable side pads.
PNP complement: PBSS5330PAS
2. Features and benefits
• Low collector-emitter saturation voltage V_CEsat
• High collector current capability I_C and I_CM
• High collector current gain (h_FE) at high I_C
• High efficiency due to less heat generation
• High temperature applications up to 175 °C
• Reduced Printed-Circuit Board (PCB) area requirements
• Leadless small SMD plastic package with soldarable side pads
• Exposed heat sink for excellent thermal and electrical conductivity
• Suitable for Automatic Optical Inspection (AOI) of solder joint
• AEC-Q101 qualified
3. Applications
• Loadswitch
• Battery-driven devices
• Power management
• Charging circuits
• Power switches (e.g. motors, fans)
4. Quick reference data
Table 1.
Symbol
V_CEO
I_C
I_CM
R_CEsat
Quick reference data
Parameter
Conditions
collector-emitter
voltage
open base
collector current
peak collector current
collector-emitter
saturation resistance
single pulse; t_p ≤ 1 ms
I_C = 3 A; I_B = 300 mA; pulsed;
t_p ≤ 300 µs; δ ≤ 0.02; T_amb = 25 °C
Min Typ Max Unit
-
-
30
V
-
-
3
A
-
-
5
A
-
75
100 mΩ
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