 English |
|
|
|
|
|
|
|
| PBSS302PD Datasheet, PDF (11/14 Pages) NXP Semiconductors – 40 V PNP low VCEsat (BISS) transistor | |||
| |||
| ◁ |
Philips Semiconductors
8. Test information
PBSS302PD
40 V PNP low VCEsat (BISS) transistor
âIB
90 %
10 %
âIC
90 %
âIBon (100 %)
input pulse
(idealized waveform)
â I Boff
output pulse
(idealized waveform)
âIC (100 %)
10 %
td
tr
t on
Fig 13. BISS transistor switching time deï¬nition
ts
t off
t
tf
006aaa266
VBB
VCC
(probe)
oscilloscope
450 â¦
VI
RB
R2
R1
RC
Vo (probe)
oscilloscope
450 â¦
DUT
(1) VCC = â10 V; IC = â2 A; IBon = â0.1 A; IBoff = 0.1 A
Fig 14. Test circuit for switching times
mgd624
9397 750 14513
Product data sheet
Rev. 01 â 18 April 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
11 of 15
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese