PBSS302PD Datasheet, PDF (1/14 Pages) NXP Semiconductors – 40 V PNP low VCEsat (BISS) transistor

PBSS302PD
40 V PNP low V_CEsat (BISS) transistor
Rev. 01 — 18 April 2005
Product data sheet
1. Product profile
1.1 General description
PNP low V_CEsat Breakthrough in Small Signal (BISS) single bipolar PNP transistor in a
SOT457 (SC-74) SMD plastic package.
NPN complement: PBSS302ND
1.2 Features
s Ultra low collector-emitter saturation voltage V_CEsat
s 4 A continuous collector current capability I_C (DC)
s Up to 15 A peak current
s Very low collector-emitter saturation resistance
s High efficiency due to less heat generation
1.3 Applications
s Power management functions
s Charging circuits
s DC-to-DC conversion
s MOSFET gate driving
s Power switches (e.g. motors, fans)
s Thin Film Transistor (TFT) backlight inverter
1.4 Quick reference data
Table 1:
Symbol
V_CEO
I_C
I_CM
R_CEsat
Quick reference data
Parameter
Conditions
collector-emitter voltage open base
collector current (DC)
peak collector current
collector-emitter saturation
resistance
t = 1 ms or limited
by T_j(max)
I_C = −6 A;
I_B = −600 mA
Min Typ
-
-
[1] _-
-
-
-
[2] _-
55
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), AL₂O₃, standard footprint.
[2] Pulse test: t_p ≤ 300 µs; δ ≤ 0.02.
Max Unit
−40 V
−4 A
−15 A
75 mΩ