74AUP1G3208 Datasheet, PDF (11/19 Pages) NXP Semiconductors – Low-power 3-input OR-AND gate

Philips Semiconductors
74AUP1G3208
Low-power 3-input OR-AND gate
Table 10: Dynamic characteristics …continued
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 10
Symbol Parameter
Conditions
Min
T_amb = 25 °C
C_PD
power dissipation capacitance f = 1 MHz
[2] [3]
V_CC = 0.8 V
-
V_CC = 1.1 V to 1.3 V
-
V_CC = 1.4 V to 1.6 V
-
V_CC = 1.65 V to 1.95 V
-
V_CC = 2.3 V to 2.7 V
-
V_CC = 3.0 V to 3.6 V
-
[1] All typical values are measured at nominal V_CC.
[2] C_PD is used to determine the dynamic power dissipation (P_D in µW).
P_D = C_PD × V_CC2 × f_i × N + Σ(C_L × V_CC2 × f_o) where:
f_i = input frequency in MHz;
f_o = output frequency in MHz;
C_L = output load capacitance in pF;
V_CC = supply voltage in V;
N = number of inputs switching;
Σ(C_L × V_CC2 × f_o) = sum of the outputs.
[3] The condition is V_I = GND to V_CC.
Typ ^[1] Max
Unit
3.1
-
pF
3.1
-
pF
3.1
-
pF
3.2
-
pF
3.6
-
pF
4.2
-
pF
Table 11: Dynamic characteristics
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 10
Symbol Parameter
Conditions
−40 °C to +85 °C
Min
Max
C_L = 5 pF
t_PHL, t_PLH
HIGH-to-LOW and
LOW-to-HIGH
propagation delay
A, B or C to Y
C_L = 10 pF
t_PHL, t_PLH HIGH-to-LOW and
LOW-to-HIGH
propagation delay
A, B or C to Y
see Figure 9
V_CC = 1.1 V to 1.3 V
V_CC = 1.4 V to 1.6 V
V_CC = 1.65 V to 1.95 V
V_CC = 2.3 V to 2.7 V
V_CC = 3.0 V to 3.6 V
see Figure 9
V_CC = 1.1 V to 1.3 V
V_CC = 1.4 V to 1.6 V
V_CC = 1.65 V to 1.95 V
V_CC = 2.3 V to 2.7 V
V_CC = 3.0 V to 3.6 V
2.2
10.9
1.8
6.9
1.4
5.6
1.2
4.1
1.1
3.4
2.5
12.8
2.1
8.0
1.8
6.4
1.6
4.8
1.4
4.2
−40 °C to +125 °C Unit
Min
Max
2.2
11.1 ns
1.8
7.2 ns
1.4
5.9 ns
1.2
4.4 ns
1.1
3.6 ns
2.5
13.1 ns
2.1
8.4 ns
1.8
6.8 ns
1.6
5.1 ns
1.4
4.4 ns
74AUP1G3208_1
Preliminary data sheet
Rev. 01.00 — 17 January 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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