BLF988_BLF988S_15 Datasheet, PDF (10/18 Pages) NXP Semiconductors – Power LDMOS transistor

NXP Semiconductors
7.4 Graphical data
7.4.1 Pulsed

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BLF988; BLF988S
Power LDMOS transistor

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V_DS = 50 V; I_Dq = 1300 mA; f = 860 MHz; t_p = 100 s;
 = 20 %.
(1) P_L(1dB) = 57.6 dBm (575 W)
(2) P_L(3dB) = 58.1 dBm (649 W)
Fig 6. Output power as a function of input power;
typical values


      
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V_DS = 50 V; f = 860 MHz; t_p = 100 s;  = 20 %.
(1) I_Dq = 100 mA
(2) I_Dq = 200 mA
(3) I_Dq = 600 mA
(4) I_Dq = 1000 mA
(5) I_Dq = 1300 mA
Fig 7. Power gain as a function of output power;
typical values
BLF988_BLF988S
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 1 August 2013
© NXP B.V. 2013. All rights reserved.
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