BLF988_BLF988S_15 Datasheet, PDF (1/18 Pages) NXP Semiconductors – Power LDMOS transistor

BLF988; BLF988S
Power LDMOS transistor
Rev. 2 — 1 August 2013
Product data sheet
1. Product profile
1.1 General description
A 600 W LDMOS RF power transistor for transmitter applications and industrial
applications. The excellent ruggedness of this device makes it ideal for digital and analog
transmitter applications.
Table 1. Application information
Test signal
f
(MHz)
P_L(AV)
(W)
P_L(M)
(W)
G_p
_D IMD3
(dB) (%) (dBc)
RF performance in a common source 860 MHz narrowband test circuit
2-tone, class-AB
pulsed, class-AB
f₁ = 860; f₂ = 860.1
860
250
-
20.8 46 32
-
600 19.8 58 -
1.2 Features and benefits
 Excellent ruggedness (VSWR  40 : 1 through all phases)
 Optimum thermal behavior and reliability, R_th(j-c) = 0.15 K/W
 High power gain
 High efficiency
 Designed for broadband operation (400 MHz to 1000 MHz)
 Internal input matching for high gain and optimum broadband operation
 Excellent reliability
 Easy power control
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 Communication transmitter applications
 Industrial applications