BFU530XR_15 Datasheet, PDF (10/22 Pages) NXP Semiconductors – NPN wideband silicon RF transistor

NXP Semiconductors
BFU530XR
NPN wideband silicon RF transistor

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V_CE = 8 V; T_amb = 25 C.
(1) f = 300 MHz
(2) f = 433 MHz
(3) f = 800 MHz
(4) f = 900 MHz
(5) f = 1800 MHz
Fig 12. Insertion power gain as a function of collector
current; typical values
V_CE = 8 V; T_amb = 25 C.
If K >1 then G_p(max) = maximum power gain. If K < 1 then
G_p(max) = MSG.
(1) f = 300 MHz
(2) f = 433 MHz
(3) f = 800 MHz
(4) f = 900 MHz
(5) f = 1800 MHz
Fig 13. Maximum power gain as a function of collector
current; typical values
BFU530XR
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 5 March 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
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