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| BFU530XR_15 Datasheet, PDF (1/22 Pages) NXP Semiconductors – NPN wideband silicon RF transistor | |||
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BFU530XR
NPN wideband silicon RF transistor
Rev. 1 â 5 March 2014
Product data sheet
1. Product profile
1.1 General description
NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin
dual-emitter SOT143R package.
The BFU530XR is part of the BFU5 family of transistors, suitable for small signal to
medium power applications up to 2 GHz.
1.2 Features and benefits
ï® Low noise, high breakdown RF transistor
ï® AEC-Q101 qualified
ï® Minimum noise figure (NFmin) = 0.65 dB at 900 MHz
ï® Maximum stable gain 21 dB at 900 MHz
ï® 11 GHz fT silicon technology
1.3 Applications
ï® Applications requiring high supply voltages and high breakdown voltages
ï® Broadband amplifiers up to 2 GHz
ï® Low noise amplifiers for ISM applications
ï® ISM band oscillators
1.4 Quick reference data
Table 1. Quick reference data
Tamb = 25 ï°C unless otherwise specified
Symbol Parameter
Conditions
VCB
collector-base voltage
open emitter
VCE
collector-emitter voltage open base
shorted base
VEB
emitter-base voltage
open collector
IC
collector current
Ptot
total power dissipation
Tsp ï£ 87 ï°C
hFE
DC current gain
IC = 10 mA; VCE = 8 V
Cc
collector capacitance
VCB = 8 V; f = 1 MHz
fT
transition frequency
IC = 15 mA; VCE = 8 V; f = 900 MHz
Min Typ Max Unit
--
24 V
--
12 V
--
24 V
--
2V
- 10 40 mA
[1] -
-
450 mW
60 95 200
- 0.36 -
pF
- 11 -
GHz
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