74LVC1G58 Datasheet, PDF (10/18 Pages) NXP Semiconductors – Low-power configurable multiple function gate

Philips Semiconductors
74LVC1G58
Low-power configurable multiple function gate
V_CC
V_I
PULSE
GENERATOR
V_O
D.U.T.
R_T
V_EXT
R_L
C_L
R_L
mna616
Measurement points are given in Table 12.
Definitions for test circuit:
R_T = Termination resistance should be equal to output impedance Z_o of the pulse generator.
C_L = Load capacitance including jig and probe capacitance.
R_L = Load resistor.
V_EXT = Test voltage for switching times.
Fig 12. Load circuitry for switching times.
Table 12: Measurement points
Supply voltage Input
V_CC
1.65 V to 1.95 V
2.3 to 2.7 V
2.7 V
V_I
V_CC
V_CC
2.7 V
t_r = t_f
≤ 2.0 ns
≤ 2.0 ns
≤ 2.5 ns
3.0 V to 3.6 V
2.7 V ≤ 2.5 ns
4.5 V to 5.5 V
V_CC
≤ 2.5 ns
Load
C_L
30 pF
30 pF
50 pF
50 pF
50 pF
R_L
1 kΩ
500 Ω
500 Ω
500 Ω
500 Ω
V_EXT
t_PLH, t_PHL t_PZH, t_PHZ t_PZL, t_PLZ
open
GND
2 × V_CC
open
GND
2 × V_CC
open
GND
6V
open
GND
6V
open
GND
2 × V_CC
14. Transfer characteristics
Table 13: Transfer characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
Min Typ Max Unit
T_amb = −40 °C to +85 °C ^[1]
V_T+
positive-going threshold
voltage
V_T−
negative-going threshold
voltage
see Figure 13, 14, 15 and 16
V_CC = 1.8 V
V_CC = 2.3 V
V_CC = 3.0 V
V_CC = 4.5 V
V_CC = 5.5 V
see Figure 13, 14, 15 and 16
V_CC = 1.8 V
V_CC = 2.3 V
V_CC = 3.0 V
V_CC = 4.5 V
V_CC = 5.5 V
0.70 1.02 1.20 V
1.11 1.42 1.60 V
1.50 1.79 2.00 V
2.16 2.52 2.74 V
2.61 2.99 3.33 V
0.30 0.53 0.72 V
0.58 0.77 1.00 V
0.80 1.04 1.30 V
1.21 1.55 1.90 V
1.45 1.86 2.29 V
9397 750 13852
Product data sheet
Rev. 01 — 15 September 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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