PSMN2R7-30BL_15 Datasheet, PDF (1/15 Pages) NXP Semiconductors – N-channel 30 V 3.0 m logic level MOSFET in D2PAK

PSMN2R7-30BL
N-channel 30 V 3.0 mΩ logic level MOSFET in D2PAK
Rev. 1 — 21 March 2012
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
 High efficiency due to low switching
and conduction losses
 Suitable for logic level gate drive
sources
1.3 Applications
 DC-to-DC converters
 Load switiching
 Motor control
 Server power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
V_DS
drain-source voltage
I_D
drain current
P_tot
total power dissipation
T_j
junction temperature
Static characteristics
R_DSon
drain-source on-state
resistance
Dynamic characteristics
Q_GD
Q_G(tot)
gate-drain charge
total gate charge
Avalanche ruggedness
E_DS(AL)S
non-repetitive
drain-source
avalanche energy
Conditions
T_j ≥ 25 °C; T_j ≤ 175 °C
T_mb = 25 °C; V_GS = 10 V; see Figure 1
T_mb = 25 °C; see Figure 2
V_GS = 10 V; I_D = 25 A; T_j = 100 °C;
see Figure 13; see Figure 12
V_GS = 10 V; I_D = 25 A; T_j = 25 °C;
see Figure 12
V_GS = 4.5 V; I_D = 25 A; V_DS = 15 V
V_GS = 4.5 V; I_D = 25 A; V_DS = 15 V;
see Figure 14; see Figure 15
V_GS = 10 V; T_j(init) = 25 °C; I_D = 100 A;
V_sup ≤ 30 V; R_GS = 50 Ω; unclamped
[1] Continuous current is limited by package.
Min Typ Max Unit
-
-
30 V
[1] _-
-
100 A
-
-
170 W
-55 -
175 °C
-
3.6 4.2 mΩ
-
2.57 3
mΩ
-
8
-
nC
-
32 -
nC
-
-
300 mJ