PMV33UPE_15 Datasheet, PDF (1/15 Pages) NXP Semiconductors – 20 V, single P-channel Trench MOSFET

PMV33UPE
20 V, single P-channel Trench MOSFET
Rev. 1 — 12 June 2012
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
1.2 Features and benefits
 Low threshold voltage
 Very fast switching
 Trench MOSFET technology
 2 kV ESD protected
1.3 Applications
 Relay driver
 High-speed line driver
 High-side loadswitch
 Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
V_DS
drain-source voltage
V_GS
gate-source voltage
I_D
drain current
Static characteristics
R_DSon
drain-source on-state
resistance
Conditions
T_j = 25 °C
V_GS = -4.5 V; T_amb = 25 °C; t ≤ 5 s
V_GS = -4.5 V; I_D = -3 A; T_j = 25 °C
Min Typ Max Unit
-
-
-20 V
-8
-
8
V
[1]
-
-
-5.3 A
-
30
36
mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm².