BUK9230-100B_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET

BUK9230-100B
N-channel TrenchMOS logic level FET
Rev. 02 — 1 February 2011
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
„ AEC Q101 compliant
„ Low conduction losses due to low
on-state resistance
„ Suitable for logic level gate drive
sources
„ Suitable for thermally demanding
environments due to 185 °C rating
1.3 Applications
„ 12 V, 24 V and 42 V loads
„ Automotive systems
„ General purpose power switching
„ Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 185 °C
I_D
drain current
V_GS = 5 V; T_mb = 25 °C;
see Figure 1; see Figure 3
P_tot
total power
dissipation
T_mb = 25 °C; see Figure 2
Static characteristics
R_DSon
drain-source on-state V_GS = 10 V; I_D = 25 A; T_j = 25 °C
resistance
V_GS = 5 V; I_D = 25 A; T_j = 25 °C;
see Figure 9; see Figure 13
Avalanche ruggedness
E_DS(AL)S non-repetitive
drain-source
avalanche energy
Dynamic characteristics
I_D = 47 A; V_sup ≤ 100 V;
R_GS = 50 Ω; V_GS = 5 V;
T_j(init) = 25 °C; unclamped
Q_GD
gate-drain charge
V_GS = 5 V; I_D = 25 A; V_DS = 80 V;
T_j = 25 °C; see Figure 10
Min Typ Max Unit
-
-
100 V
-
-
47 A
-
-
167 W
-
24 28 mΩ
-
25 30 mΩ
-
-
150 mJ
-
13 -
nC