BUK7613-60E_15 Datasheet, PDF (1/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FETll

BUK7613-60E
N-channel TrenchMOS standard level FET
13 July 2012
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology.
This product has been designed and qualified to AEC Q101 standard for use in high
performance automotive applications.
1.2 Features and benefits
• AEC Q101 compliant
• Repetitive avalanche rated
• Suitable for thermally demanding environments due to 175 °C rating
• True standard level gate with VGS(th) rating of greater than 1V at 175 °C
1.3 Applications
• 12 V Automotive systems
• Motors, lamps and solenoid control
• Start-Stop micro-hybrid applications
• Transmission control
• Ultra high performance power switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 175 °C
I_D
drain current
V_GS = 10 V; T_mb = 25 °C; Fig. 1
P_tot
total power dissipation T_mb = 25 °C; Fig. 2
Static characteristics
R_DSon
drain-source on-state V_GS = 10 V; I_D = 15 A; T_j = 25 °C;
resistance
Fig. 11
Dynamic characteristics
Q_GD
gate-drain charge
I_D = 15 A; V_DS = 48 V; V_GS = 10 V;
Fig. 13; Fig. 14
Min Typ Max Unit
-
-
60
V
-
-
58
A
-
-
96
W
-
9.44 13
mΩ
-
6.9 -
nC
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