BUJ302AD_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – NPN power transistor

BUJ302AD
NPN power transistor
Rev. 01 — 28 March 2011
Product data sheet
1. Product profile
1.1 General description
High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT428
(DPAK) surface mounted package.
1.2 Features and benefits
„ Fast switching
„ High voltage capability
„ Low thermal resistance
„ Surface-mountable package
1.3 Applications
„ DC-to-DC converters
„ High-frequency electronic lighting
ballast applications
„ Inverters
„ Motor control systems
1.4 Quick reference data
Table 1.
Symbol
I_C
Quick reference data
Parameter
collector current
P_tot
V_CESM
total power dissipation
collector-emitter peak
voltage
Static characteristics
h_FE
DC current gain
Conditions
see Figure 1; see Figure 2;
see Figure 4
T_mb ≤ 25 °C; see Figure 3
V_BE = 0 V
Min Typ Max Unit
-
-
4
A
-
-
80 W
-
-
1050 V
I_C = 0.1 A; V_CE = 5 V;
[1] _{48 66 100}
T_mb = 25 °C; see Figure 11
I_C = 0.8 A; V_CE = 3 V;
[1] _{25 42 50}
T_mb = 25 °C; see Figure 12
[1] Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %