BTA216 Datasheet, PDF (1/4 Pages) NXP Semiconductors – Three quadrant triacs guaranteed commutation

Philips Semiconductors
Three quadrant triacs
guaranteed commutation
Objective specification
BTA216 series D, E and F
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Passivated guaranteed commutation
triacs in a plastic envelope intended for
use in motor control circuits or with other
highly inductive loads. These devices
balance the requirements of commutation
performance and gate sensitivity. The
"sensitive gate" E series and "logic level"
D series are intended for interfacing with
low power drivers, including micro
controllers.
SYMBOL PARAMETER
V_DRM
I_T(RMS)
I_TSM
BTA216-
BTA216-
BTA216-
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
MAX.
600D
600E
600F
600
16
140
MAX. UNIT
-
800E
800F
800 V
16
A
140 A
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
tab
1 main terminal 1
2 main terminal 2
T2
T1
3 gate
tab main terminal 2
1 23
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
V_DRM
Repetitive peak off-state
voltages
-600
-
600¹
I_T(RMS)
I_TSM
I²t
dI_T/dt
I_GM
V_GM
P_GM
P_G(AV)
T_stg
T_j
RMS on-state current
Non-repetitive peak
on-state current
I²t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
full sine wave;
-
T_mb ≤ 99 ˚C
full sine wave;
T_j = 25 ˚C prior to
surge
t = 20 ms
-
t = 16.7 ms
-
t = 10 ms
-
I_TM = 20 A; I_G = 0.2 A; -
dI_G/dt = 0.2 A/µs
-
-
-
over any 20 ms
-
period
-40
-
MAX.
16
140
150
98
100
2
5
5
0.5
150
125
-800
800
UNIT
V
A
A
A
A²s
A/µs
A
V
W
W
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
October 1999
1
Rev 1.100