BLM8G0710S-45AB_15 Datasheet, PDF (1/20 Pages) NXP Semiconductors – LDMOS 2-stage power MMIC

BLM8G0710S-45AB;
BLM8G0710S-45ABG
LDMOS 2-stage power MMIC
Rev. 1 — 20 August 2015
Objective data sheet
1. Product profile
1.1 General description
The BLM8G0710S-45AB(G) is a dual section, asymmetric, 2-stage power MMIC using
NXP’s state of the art GEN8 LDMOS technology. This multiband device is perfectly suited
as small cell final stage in Doherty configuration, or as general purpose driver in the
700 MHz to 1000 MHz frequency range. Available in gull wing or straight lead outline.
Table 1. Performance
Typical RF performance at T_case = 25 C. Test signal: 3GPP test model 1; 64 DPCH; PAR = 9.9 dB
at 0.01% probability on CCDF; specified in a class-AB production circuit.
Test signal
f
I_Dq1 ^[1] I_Dq2 ^[1] V_DS P_L(AV) G_p
_D
(MHz) (mA) (mA) (V) (W) (dB) (%)
ACPR_5M
(dBc)
single carrier W-CDMA
carrier section
957.5 30
120 28 3
35 27 41.5
peaking section
957.5 60
240 28 6
35.2 24.5 40
[1] I_Dq1 represents driver stage; I_Dq2 represents final stage.
1.2 Features and benefits
 Designed for broadband operation (frequency 700 MHz to 1000 MHz)
 High section-to-section isolation enabling multiple combinations
 High Doherty efficiency thanks to 2 : 1 asymmetry
 Integrated temperature compensated bias
 Biasing of individual stages is externally accessible
 Integrated ESD protection
 Excellent thermal stability
 High power gain
 On-chip matching for ease of use
 Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
1.3 Applications
 RF power MMIC for W-CDMA base stations in the 700 MHz to 1000 MHz frequency
range. Possible circuit topologies are the following as also depicted in Section 8.1:
 Asymmetric final stage in Doherty configuration
 Asymmetric driver for high power Doherty amplifier