BLF888B_15 Datasheet, PDF (1/17 Pages) NXP Semiconductors – UHF power LDMOS transistor

BLF888B; BLF888BS
UHF power LDMOS transistor
Rev. 2 — 12 July 2013
Product data sheet
1. Product profile
1.1 General description
A 650 W LDMOS RF power transistor for broadcast transmitter applications and industrial
applications. The excellent ruggedness of this device makes it ideal for digital and analog
transmitter applications.
Table 1. Application information
RF performance at V_DS = 50 V unless otherwise specified.
Mode of operation f
P_L(AV) P_L(M) G_p
_D IMD3 IMD_shldr
(MHz)
(W) (W) (dB) (%) (dBc) (dBc)
RF performance in a common source 860 MHz narrowband test circuit
2-tone, class-AB
f₁ = 860; f₂ = 860.1 250 -
DVB-T (8k OFDM) 858
120 -
21 46 34 -
21 33 -
31^[1]
RF performance in a common source 470 MHz to 860 MHz broadband test circuit
DVB-T (8k OFDM) 858
120 -
20 32 -
32 ^[1]
PAR
(dB)
-
8.2 ^[2]
8.0 ^[2]
[1] Measured [dBc] with delta marker at 4.3 MHz from center frequency.
[2] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on
CCDF.
1.2 Features and benefits
 Excellent ruggedness
 Optimum thermal behavior and reliability, R_th(j-c) = 0.15 K/W
 High power gain
 High efficiency
 Designed for broadband operation (470 MHz to 860 MHz)
 Internal input matching for high gain and optimum broadband operation
 Excellent reliability
 Easy power control
 Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
1.3 Applications
 Communication transmitter applications in the UHF band
 Industrial applications in the UHF band