BLF6G15L-250PBRN_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – Power LDMOS transistor

BLF6G15L-250PBRN
Power LDMOS transistor
Rev. 2 — 3 November 2010
Product data sheet
1. Product profile
1.1 General description
250 W LDMOS power transistor for base station applications at frequencies from
1450 MHz to 1550 MHz.
Table 1. Typical performance
Typical RF performance at T_case = 25 °C in a class-AB production test circuit.
Mode of operation
f
V_DS
P_L(AV)
G_p
η_D
(MHz)
(V) (W)
(dB) (%)
2C-WCDMA
1476 to 1511 28 60
18.5 33.0
ACPR
(dBc)
−32^[1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier.
Carrier spacing 5 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
„ Typical 2C-WCDMA performance at frequencies of 1476 MHz and 1511 MHz, a supply
voltage of 28 V and an I_Dq of 1410 mA:
‹ Average output power = 60 W
‹ Power gain = 18.5 dB
‹ Efficiency = 33.0 %
‹ ACPR = −32 dBc
„ Easy power control
„ Integrated ESD protection
„ Enhanced ruggedness
„ High efficiency
„ Excellent thermal stability
„ Designed for broadband operation (1450 MHz to 1550 MHz)
„ Internally matched for ease of use
„ Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
„ Integrated current sense