 English |
|
|
|
|
|
|
|
| BLC8G20LS-310AV_15 Datasheet, PDF (1/15 Pages) NXP Semiconductors – Power LDMOS transistor | |||
| |||
|
BLC8G20LS-310AV
Power LDMOS transistor
Rev. 2 â 6 May 2015
Product data sheet
1. Product profile
1.1 General description
310 W LDMOS packaged asymmetric Doherty power transistor for base station
applications at frequencies from 1900 MHz to 2000 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 ï°C in an asymmetrical Doherty production test circuit.
VDS = 28 V; IDq = 650 mA (main); VGS(amp)peak = 0.5 V, unless otherwise specified.
Test signal
f
VDS
PL(AV) Gp
ï¨D
ACPR
(MHz)
(V)
(dBm) (dB) (%)
(dBc)
1-carrier W-CDMA
1930 to 1995
28
47.5 17
42.5
ï33 [1]
[1] Test signal: 1-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 9.65 dB at 0.01% probability on
CCDF per carrier.
1.2 Features and benefits
ï® Excellent ruggedness
ï® High-efficiency
ï® Low thermal resistance providing excellent thermal stability
ï® Lower output capacitance for improved performance in Doherty applications
ï® Designed for low memory effects providing excellent digital pre-distortion capability
ï® Internally matched for ease of use
ï® Integrated ESD protection
ï® Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
ï® RF power amplifiers for base stations and multi carrier applications in the 1900 MHz to
2000 MHz frequency range
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese