BLA0912-250 Datasheet, PDF (1/12 Pages) NXP Semiconductors – Avionics LDMOS transistor

BLA0912-250
Avionics LDMOS transistor
Rev. 02 — 22 July 2004
Product data sheet
1. Product profile
1.1 General description
Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead
SOT502A flange package with a ceramic cap. The common source is connected to the
mounting flange.
1.2 Features
s High power gain
s Easy power control
s Excellent ruggedness
s Source on mounting base eliminates DC isolators, reducing common mode
inductance.
1.3 Applications
s Avionics transmitter applications in the 960 MHz to 1215 MHz frequency range such
as Mode-S, TCAS and JTIDS, DME or TACAN.
1.4 Quick reference data
Table 1: Quick reference data
Typical RF performance measured in common source class-AB circuit at P_L = 250 W and 960 MHz to 1215 MHz frequency
band. T_h = 25 °C; Z_th = 0.15 K/W; unless specified otherwise.
Mode of operation
Conditions
V_DS P_L G_p ∆G_p η_D Pulse droop t_r t_f Z_th(j-h) ϕ_R
(V) (W) (dB) (dB) (%) (dB)
(ns) (ns) (K/W) (deg)
All modes
t_p = 100 µs; δ = 10 % 36 250 13.5 0.8 50 0.1
25 6 0.18 ±5
TCAS:
t_p = 32 µs; δ = 0.1 % 36 250 14.0 0.8 50 0
1030 MHz to 1090 MHz
25 6 0.07 ±5
Mode-S:
t_p = 128 µs; δ = 2 % 36 250 13.5 0.8 50 0.1
1030 MHz to 1090 MHz _{tp = 340 µs; δ = 1 % 36 250 13.5 0.8 50 0.2}
JTIDS:
t_p = 3.3 ms; δ = 22 % 36 200 13.0 1.2 45 0.2
960 MHz to 1215 MHz
25 6
25 6
25 6
0.15 ±5
0.20 ±5
0.45 ±5