BGM1013 Datasheet, PDF (1/14 Pages) NXP Semiconductors – MMIC wideband amplifier

BGM1013
MMIC wideband amplifier
Rev. 03 — 9 December 2004
Product data sheet
1. Product profile
CAUTION
1.1 General description
Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal
matching circuit in a 6-pin SOT363 SMD plastic package.
This device is sensitive to electrostatic discharge (ESD). Therefore care should be taken
during transport and handling.
MSC895
1.2 Features
s Internally matched to 50 Ω
s Good output match to 75 Ω
s Very high gain; 35.5 dB at 1 GHz
s Upper corner frequency at 2.1 GHz
s 31 dB flat gain up to 2.2 GHz application
s 14 dBm saturated output power at 1 GHz
s High linearity (23 dBm IP3_out and 43 dBc IM2)
s 40 dB isolation.
1.3 Applications
s Low Noise Block (LNB) Intermediate Frequency (IF) amplifiers
s Cable systems
s General purpose.
1.4 Quick reference data
Table 1:
Symbol
V_S
I_S
|s₂₁|²
NF
P_L(sat)
Quick reference data
Parameter
DC supply voltage
DC supply current
insertion power gain
noise figure
saturated load power
Conditions
RF input; AC coupled
f = 1 GHz
f = 1 GHz
f = 1 GHz
Min Typ Max Unit
-
5
6
V
23
27.5 33
mA
34.5 35.5 36.2 dB
-
4.6 4.7 dB
13.0 14.0 -
dBm