74AUP1G373_15 Datasheet, PDF (1/25 Pages) NXP Semiconductors – Low-power D-type transparent latch; 3-state

74AUP1G373
Low-power D-type transparent latch; 3-state
Rev. 6 — 4 July 2012
Product data sheet
1. General description
The 74AUP1G373 provides the single D-type transparent latch with 3-state output. While
the latch-enable (LE) input is high, the Q output follows the data (D) input. When pin LE is
LOW, the latch stores the information that was present at the D-input one set-up time
preceding the HIGH-to-LOW transition of pin LE. When pin OE is LOW, the contents of
the latch is available at the (Q) output. When pin OE is HIGH, the output goes to the
high-impedance OFF-state. Operation of input pin OE does not affect the state of the
latch.
Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall
times across the entire V_CC range from 0.8 V to 3.6 V.
This device ensures a very low static and dynamic power consumption across the entire
V_CC range from 0.8 V to 3.6 V.
This device is fully specified for partial power-down applications using I_OFF.
The I_OFF circuitry disables the output, preventing the damaging backflow current through
the device when it is powered down.
2. Features and benefits
 Wide supply voltage range from 0.8 V to 3.6 V
 High noise immunity
 Complies with JEDEC standards:
 JESD8-12 (0.8 V to 1.3 V)
 JESD8-11 (0.9 V to 1.65 V)
 JESD8-7 (1.2 V to 1.95 V)
 JESD8-5 (1.8 V to 2.7 V)
 JESD8-B (2.7 V to 3.6 V)
 ESD protection:
 HBM JESD22-A114F Class 3A exceeds 5000 V
 MM JESD22-A115-A exceeds 200 V
 CDM JESD22-C101E exceeds 1000 V
 Low static power consumption; I_CC = 0.9 A (maximum)
 Latch-up performance exceeds 100 mA per JESD 78 Class II
 Inputs accept voltages up to 3.6 V
 Low noise overshoot and undershoot < 10 % of V_CC
 I_OFF circuitry provides partial Power-down mode operation
 Multiple package options
 Specified from 40 C to +85 C and 40 C to +125 C