1SS367 Datasheet, PDF (2/3 Pages) Toshiba Semiconductor – DIODE (HIGH SPEED SWITCHING APPLICATION)

1SS367
300m
100m
30m
10m
3m
1m
300
100
Ta=100°C
75°C
50°C
25°C
IF - VF
0°C
-25°C
30
10
0
0.1
0.2
0.3
0.4
0.5
Forward Voltage VF (V)
CT-VR
40
f=1MHz
Ta=25°C
30
20
10
0
10m 30m 0.1 0.3 1 3 10
Reverse Voltage VR (V)
1m
300
100
IR - VR
Ta=100°C
75°C
30
50°C
10
3
1
300n
100n
25°C
0°C
-25°C
30n
10n
0 2 4 6 8 10 12 14
Reverse Voltage VR (V)
240
200
160
120
80
40
0
0
Ptot - Ta
Mounted on a glass
epoxy circuit board of
20*20mm, pad
dimension 4*4 mm
25 50 75 100 125 150
Ambient Temperature Ta (°C)