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| 1SS367 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – DIODE (HIGH SPEED SWITCHING APPLICATION) | |||
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1SS367
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
Features
⢠Low forward voltage
Applications
⢠High Speed Switching
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
1
2
S3
Top View
Marking Code: "S3"
Simplified outline SOD-323 and symbol
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Maximum (Peak) Reverse Voltage
Reverse Voltage
Average Forward Current
Maximum (Peak) Forward Current
Surge Current (10 ms)
Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Symbol
Value
Unit
VRM
15
V
VR
10
V
IO
100
mA
IFM
200
mA
IFSM
1
A
Ptot
200
mW
TJ
125
OC
Topr
- 40 to + 100
OC
Ts
- 55 to + 125
OC
Characteristics at Ta = 25 OC
Parameter
Forward Voltage
at IF = 5 mA
at IF = 100 mA
Reverse Current
at VR = 10 V
Total Capacitance
at f = 1 MHz
Symbol
Max.
Unit
VF
0.3
V
0.5
IR
20
µA
CT
40
pF
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