C30659 Datasheet, PDF (4/9 Pages) PerkinElmer Optoelectronics – Silicon and InGaAs APD Preamplifier Modules

C30659-1550nm Series
Table 3. Electrical Characteristics at TA=22ºC
Test Conditions: Ambient Temperature, Vamp = ±5 Volts, HV = +VR (see Note 1), RL = 50Ω AC Coupled
1550nm InGaAs APD
Detector Type
C30659-1550-R2A
C30659-1550-R08B
(InGaAs APD C30662E)
(InGaAs APD C30645E)
Active Diameter
Min
Typ
Max
0.2
Min
Typ
Max
0.08
Active Area
0.03
0.005
Bandwidth Range
50
200
Temperature Coefficient of VR
for constant Gain
VR for specified responsivity
Temperature sensor sensitivity
-
0.2
-
40
Note 1 70
-1.8
-2.1 -2.4
-
0.2
-
40
Note 1 70
-1.8
-2.1
-2.4
Responsivity
At 1300nm
At 1550nm
RF (Internal Feedback Resistor)
Noise Equivalent Power (NEP) (note 3)
f - 100 kHz, ∆f = 1.0 Hz
At 1300nm
At 1550nm
Output Spectral Voltage:
(f = 100 kHz - f-3dB)
Output Impedance
System Bandwidth, f-3dB
Rise Time, tr (λ = 900 and 1060nm)
10% to 90% points
Fall Time, tf (λ = 830 and 900nm)
90% to 10% points
-
300
-
-
340
-
-
68
-
-
150
180
-
130
160
-
45
55
33
40
50
40
50
-
-
7
-
-
7
-
-
80
-
-
90
-
-
18
-
-
250
375
-
220
330
-
20
30
33
40
50
175
200
-
-
2
-
-
2
-
Recovery time after overload (note 4)
-
-
150
-
-
150
Output Voltage Swing (1kΩ load) (note 5)
2
3
-
2
3
-
Output Voltage Swing (50Ω load) (note 5)
0.7
0.9
-
0.7
0.9
-
Output Offset Voltage
-1
-0.3
1
-1
-0.3
1
Positive Supply Current (V+)
-
20
35
-
20
35
Negative Supply Current (V-)
-
10
20
-
10
20
Notes: 1. A specific value of VR is supplied with each device. The VR value will be within the specified ranges.
2. If = 0.1 mA, 25°C
3. NEPmax is the Maximum Output Spectral Noise Voltage divided by the typical Responsivity.
4. 0dBm, 250ns pulse.
5. Pulsed operation.
mm
mm²
MHz
V/°C
V
mV/°C
kV/W
kV/W
kΩ
fW/√Hz
fW/√Hz
nV/√Hz
Ω
MHz
ns
ns
ns
V
V
V
mA
mA
w w w. o p t o e l e c t r o n i c s . p e r k i n e l m e r. c o m
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