C30659 Datasheet, PDF (1/9 Pages) PerkinElmer Optoelectronics – Silicon and InGaAs APD Preamplifier Modules

Optoelectronics
Preliminary Data Sheet
C30659-900-1060-1550nm Series
Silicon and InGaAs APD Preamplifier Modules
Applications
Range Finding
Confocal Microscope
LIDAR
Description
PerkinElmer C30659 Series includes a
Silicon or InGaAs Avalanche
Photodiode with a hybrid preamplifier.
It is supplied in a single modified
12-lead TO-8 package.
The avalanche photodiodes used in
these devices are the C30817E,
C30902E, C30954E, C30956E,
C30645E and C30662E that provide
very good response between 830 and
1550 nanometers and very fast rise
and fall times at all wavelengths. The
preamplifier section uses a very low
noise GaAs FET front end designed to
operate at higher transimpedance
than the regular C30950 series.
The C30659 is pin to pin compatible
with the C30950 series. The output
of the C30659 is negative. An emitter
follower is used as an output buffer
stage. To obtain the wideband
characteristics, the output of these
devices should be AC (capacitively)
coupled to a 50 Ohm termination.
The module must not be DC coupled
to loads of less than 2,000 Ohms.
For field use, it is recommended that
a temperature compensated HV
supply be employed to maintain
responsivity constant over
temperature.
Features
System bandwidth 50 MHz and
200 MHz
Ultra low noise equivalent power
(NEP)
Spectral response range:
Silicon APD: 400 to 1100nm
InGaAs APD: 1100 to 1700nm
Power consumption (150 mW typ.)
+/-5 Volts amplifier operating
voltages
50 Ω AC Load capability
Hermetically sealed TO-8 packages
High reliability
Fast overload recovery
Pin compatible with the C30950
series
Light entry angle ∅130°
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