English
Language : 

PI3USB102E Datasheet, PDF (3/7 Pages) Pericom Semiconductor Corporation – USB 2.0 High-Speed (480 Mbps) Switch with 5V Protection
PI3USB102E
USB 2.0 High-Speed (480 Mbps) Switch with 5V Protection
Maximum Ratings
(Above which useful life may be impaired. For user guidelines, not tested.)
Storage Temperature.......................................................–65°C to +150°C
Supply Voltage to Ground Potential ....................................–0.5V to +6V
DC Input Voltage..................................................................–0.5V to +6V
DC Output Current ........................................................................120mA
Power Dissipation..............................................................................0.5W
Note: Stresses greater than those listed under MAXIMUM
RATINGS may cause permanent damage to the device. This
is a stress rating only and functional operation of the device
at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Ex-
posure to absolute maximum rating conditions for extended
periods may affect reliability.
DC Electrical Characteristics for USB 2.0 Switching over Operating Range
(TA = –40°C to +85°C, VDD = 3.0 - 5.5V)
Parameter
Description
Test Conditions(1)
Min.
Typ.(2) Max.
Units
VIH
Input HIGH Voltage
Guaranteed HIGH level
1.4
VIL
Input LOW Voltage
Guaranteed LOW level
VIK
Clamp Diode Voltage
VDD = Max., IIK = –18mA
IIH
Input HIGH Current for SEL and OE VDD = Max., VIH = VDD
-100
IIL
Input LOW Current for SEL and OE VDD = Max., VIL = GND
-100
IIH
Input HIGH Current for Y+/Y-
VDD = 3.3V., VY = 5.25V
IIL
Input LOW Current for Y+/Y-
VDD = 3.3V., VY = 0V
ILeakage
Leakage from Y+/Y- to Vdd when
VY+/Y- > Vdd
VDD = 3.3V., VY+/Y- = 5.25V,
OE = LOW
RON
Switch On-Resistance(3)
VDD = 3V, 0V ≤ Vinput ≤ 1.0V,
ION = –40mA
RFLAT(ON) On-Resistance Flatness(3)
VDD = 3V, 0V ≤ Vinput ≤ 1.0V,
ION = –40mA
DRON
On-Resistance match from center
ports to any other port(3)
VDD = 3V, 0V ≤ Vinput ≤ 1.0V,
ION = –40mA
VDD = 3.0 V
3.1
VOVP
Input Over-Voltage Protection Thresh-
old(4)
VDD = 3.3 V
3.4
VDD = 3.6 V
3.7
IOZ_M
Output leakage current on port M
when D path is on
VY+/Y- = 5.25V, VDD = 3.3V
SEL = High, VM+/M- = 0V
-200
IOZ_D
Output leakage current on port D
when M path is on
VY+/Y- = 5.25V, VDD = 3.3V
SEL = Low, VD+/D- = 0V
-200
IOFF
Y+/Y- Power-Off Leakage
Current
Vinput = 0V to 3.3V, VDD = 0V
0.8
V
-0.7 -1.2
100
nA
100
50
uA
1
200 nA
4.0 5.0
1.5
Ω
0.9 2.0
3.2 3.4
3.5 3.7
V
3.8 4.0
200 nA
200 nA
5
uA
14-0135
3
08/05/14