PTF102003 Datasheet, PDF (2/6 Pages) PEAK electronics GmbH – 120 Watts, 2110-2170 MHz PUSH/PULL LATERAL MOSFET

PTF 102003
Electrical Characteristics (Guaranteed)
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
On-State Resistance
Quiescent Current Gate Voltage
Gate Leakage Current
Conditions
V_GS = 0 V, I_DS = 1 µA/Side
V_DS = 28 V, V_GS = 0 V/Side
V_GS = 10 V, I_DS = 1 A/Side
V_DS = 28 V, I_D = 700 mA/Side
V_GS = 10 V, V_DS = 0 V/Side
Symbol
V_(BR)DSS
I_DSS
R_DS(on)
V_GS(Q)
I_GSS
Min
65
—
—
2.5
—
Typ Max Units
—
—
Volts
—
1.0
µA
0.13
—
Ohms
3.4
4
Volts
—
100
nA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C)
Symbol
V_DSS
V_GS
T_J
P_D
T_STG
R _JC
Value
65
+15, -0.5
200
330
1.88
–40 to +150
0.55
Unit
Volts
Volts
°C
Watts
W/°C
°C
°C/W
Typical Performance
Broa dba nd Li ne arity Performance
40
0
35
-5
30 ^Efficiency
-10
25
20
Gain
15
IRL -15
-20
-25
10
5
0
2100
-30
V_DD = 28 V, I_DQ = 1.2 A
P_OUT = 120 W PEP
IM3
-35
-40
2120 2140 2160 2180 2200
Freque nc y (MHz)
IMD vs. Output Pow er (PEP)
-30
V_DD = 28 V, f = 2170 MHz
-Tone Spacing = 100 kHz
-40
I_DQ = 1.6 A
-50 _{IDQ = 1.4 A}
I_DQ = 1.2 A
-60 ^{IDQ = 1.0 A}
-70
1
10
100
Output Pow er (Watts PEP)
1000
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