PTF102003 Datasheet, PDF (1/6 Pages) PEAK electronics GmbH – 120 Watts, 2110-2170 MHz PUSH/PULL LATERAL MOSFET

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120 Watts, 21 10-2170 MHz
PUSH/PULL LATERAL MOSFET
PTF102003
Description
Key Features
The PTF102003 is a 120–watt, internally matched LDMOS FET in-
tended for WCDMA applications from 2110 to 2170 MHz. This device typi-
cally operates at 48% efficiency (P-1dB) and 14 dB linear gain. Full gold
metallization ensures excellent device lifetime and reliability.
Typi cal Singl e Carrier WCDMA Perfor mance
-35
25
Ef f ic ienc y
-40
20
-45 ^Gain
15
-50
-55
-60
0
ACPR
V_DD = 28 V
I_DQ = 1.45 A
f = 2170 MHz
5
10
15
20
Output Pow er (Watts )
10
5
0
25
• INTERNALLY MATCHED
• Typical WCDMA Performance at 28 V
- Average Output Power = 20 W atts
- Gain = 14 dB
- Efficiency = 22%
(channel bandwidth 3.84 MHz,
adjacent channels ±5 MHz,
peak/avg 8.5:1 at 0.01% CCD)
• Typical CW Performance at 28 V
- Output Power at P1-dB = 120 W atts
- Gain = 13 dB
- Efficiency = 48%
• Full Gold Metallization
• Integrated ESD Protection; Class 1
(minimum) Human Body Model
• Excellent Thermal Stability
• Broadband Internal Matching
• Low HCI Drift
• Capable of Handling 10:1 VSWR @ 28 V ,
120 Watts (CW) Output Power
Guaranteed Performance
WCDMA Measurements (in test fixture)
V_DD = 28 V, I_DQ = 1.45 A, P_OUT = 20 W AVG
f = 2170 MHz, Single Carrier 3GPP Channel Bandwidth 3.84 MHz, Adj Channels ± 5 MHz, Peak to Avg 8.5:1
Characteristic
Symbol Min
Typ
Max
Adjacent Channel Power Ratio
ACPR
—
-45
-40
Gain
Drain Efficiency
G_ps
13
14.5
—
D
19
22
—
Two-Tone Measurements (in test fixture)
V_DD = 28 V, I_DQ = 1.20 A, P_OUT = 120 W PEP, f = 2170 MHz, Tone Spacing = 100 kHz
Characteristic
Symbol Min
Typ
Max
Gain
Drain Efficiency
Intermodulation Distortion
G_ps
12.5
14
—
D
31
36
—
IMD
-27
-30
—
All published data at T_CASE = 25°C unless otherwise indicated.
Units
dB
dB
%
Units
dB
%
dBc
www.peakdevices.com
720-406-1221