PJ6676 Datasheet, PDF (3/5 Pages) Pan Jit International Inc. – 25V N-Channel Enhancement Mode MOSFET

PJ6676
Typical Characteristics Curves (T_A=25^OC,unless otherwise noted)
60
VGS= 4.5V, 5.0V, 6.0V, 10.0V
50
4.0V
40
30
3.5V
20
3.0V
10
2.5V
0
0
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
Fig. 1_F-T_IY_GP_.1IC_-AL_OF_uO_tpR_uW_tAR_CD_hC_aH_raA_cR_teA_rC_isT_tE_icRISTIC
16
12
VGS=4.5V
8
VGS=10V
4
0
0
10 20 30 40 50 60
I_D - Drain Current (A)
FIG.3- On Resistance vs Drain Current
1.7
VGS=10V
ID=15A
1.5
1.3
1.1
0.9
0.7
-50
-25 0 25 50 75 100 125 150
T_J - Junction Tem perature (^oC)
FIG.5- On Resistance vs Junction Temperature
60
VDS=10V
50
40
30
TJ=25^OC
20
TJ=125^OC
10
TJ=-55^OC
0
1.5 2 2.5 3 3.5 4 4.5
V_GS - Gate-to-Source Voltage (V)
FIG.2- Transfer Characteristic
30
I_D =15A
25
20
15
TJ=125^OC
10
5
TJ=25^OC
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
FIG.4- On Resistance vs Gate to Source Voltage
5000
VGS=0V
f=1MHZ
4000
Ciss
3000
2000
Coss
1000
Crss
0
0
5
10 15 20 25
V_DS - Drain-to-Source Voltage (V)
FIG.6- Capacitance
STAD-JUL.19.2006
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