PJ6676 Datasheet, PDF (1/5 Pages) Pan Jit International Inc. – 25V N-Channel Enhancement Mode MOSFET

PJ6676
25V N-Channel Enhancement Mode MOSFET
FEATURES
• R_DS(ON), V_GS@10V,I_DS@15A=8mΩ
• R_DS(ON), V_GS@4.5V,I_DS@13A=12mΩ
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Specially Designed for DC/DC Converters
• Fully Characterized Avalanche Voltage and Current
• Pb free product : 99% Sn above can meet RoHS environment
substance directive request
MECHANICAL DATA
• Case: SOIC-08 Package
• Terminals : Solderable per MIL-STD-750D,Method 1036.3
• Marking : 6676
SOIC-08
8
7
6
5
1
2
3
4
PIN Assignment
1. Source
2. Source
3. Source
4. Gate
5. Drain
6. Drain
7. Drain
8. Drain
Maximum RATINGS and Thermal Characteristics (T_A=25^OC unless otherwise noted )
Drain-Source Voltage
PARAMETER
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current ¹⁾
Maximum Power Dissipation
Op e ra ti ng J unc ti o n a nd S to ra g e Te mp e ra ture Ra ng e
Avalanche Energy with Single Pulse
ID=40A, VDD=25V, L=0.5mH
Junction-to Ambient Thermal Resistance(PCB mounted)²
T_A= 2 5 ^OC
T_A= 7 5 ^OC
S ym b o l
V_DS
V _GS
I_D
I_{D M}
P_D
T_J,T_STG
E
AS
R_θJA
Limit
25
+20
15
50
2.5
1.5
-55 to + 150
400
50
Uni ts
V
V
A
A
W
O_C
mJ
O_{C /W}
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 10 sec
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
STAD-JUL.19.2006
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