BAV99S Datasheet, PDF (3/3 Pages) Siemens Semiconductor Group – Silicon Switching Diode Array (For high-speed switching applications Connected in series Internal galvanic isolated Diodes in one package)

BAV99S
100
T_J=150^OC
10
T_J=75^OC
1
T_J=25^OC
T_J=-25^OC
0.1
0
0.2 0.4
0.6 0.8
1.0 1.2
Forward voltage, V_F(V)
Fig.1-Typical forward voltage
10
T_J=150^OC
1
0.1
T_J=75^OC
0.01
T_J=25^OC
0.001
0
20
40
60
80
Reverse voltage, VR(V)
Fig.2-Typical reverse leakage
0.8
0.6
0.4
0.2
0
0
10
20
30
40
50
60
Reverse voltage.V_R(V)
Fig.3-Typical capacitance
REV.0-MAR.26.2005
PAGE . 3