BAV99S Datasheet, PDF (1/3 Pages) Siemens Semiconductor Group – Silicon Switching Diode Array (For high-speed switching applications Connected in series Internal galvanic isolated Diodes in one package)

BAV99S
VOLTAGE 85 Volts
CURRENT 200 mA
HIGH SPEED SWITCHING DIODE ARRAY
This device comes with two pairs of high speed switching diodes connected
in series, where both pairs are electrically isolated, offering a very low
capacitance, minmizing the insertion losses in data transmission lines.
FEATURES
• Maximum capacitance of 1.5pF
• Maximum leakage current of 2.5 µA
• Reverse breakdown voltage of 70V
• Rail to rail ESD protection
• Overshoot and undershoot switching control
• Mobile phones and accessories
• Video game consoles connector ports
• Pb free product are available : 99% Sn above can meet Rohs
environment substance directive request
MECHANICAL DATA
Case: SOT-363 molded plastic
Terminals: Lead solderable per MIL-STD-202G, Method 208.
MAXIMUM RATINGS (PER DIODE) TJ = 25^OC, UNLESS OTHERWISE NOTED
Rating
Maximum repetitve peak reverse voltage
Continuous reverse voltage
Continuous forward voltage
Non-repetitve peak forward current, t=1 µ sec,
Tj=25 ^OC square wave
Total power dissioation , Tj=85 ^OC
Operating Junction Temperature range
Storage temperature range
Soldering Temperature, t max = 10 secs
Symbol
V_RRM
V_R
I_F
I_FSM
P_TOT
T_J
T_STG
T_L
Value
85
75
200
4.5
250
-50 to + 150
-50 to + 150
260
Units
V
V
mA
A
mW
O_C
O_C
O_C
REV.0-MAR.26.2005
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